Performance-enhanced polysilicon microbolometer in CMOS technology with a grating structure

The resistive microbolometer fabricated by using CMOS technology can be monolithically integrated with the readout circuit but usually performs poorly in responsivity and detectivity. In this paper, poly-Si Al grating structure is demonstrated standard process. simulation results show that not only are surface plasmon polaritons generated at interface of SiO 2 , also provides infrared resonant cavity required for absorber, which improves microbolometer. According to experimental results, maximum detectivity reaches up 2.26×10 9 cmHz xmlns:xlink="http://www.w3.org/1999/xlink">1/2 /W 10 μm, means an increase 27.8% compared one without grating. Moreover, average improved when wavelength ranges from 7 μm 13 μm. It effortless implement proposed high-performance a unit based on technology, favorable high-density array integration.